List of Publications

2009-2005

 

1.    High Performance Copper Phthalocyanine Based Field Effect Transistors: A Temperature Dependent Crystalline Growth Study

    Pramod Kumar, Akanksha Sharma and Subhasis Ghosh

    Applied Physics Letter(submitted)

 

2.    Metastability of Defects, Potential Fluctuations, and Percolation Transition in GaAs

      D. Kabiraj and Subhasis Ghosh

     Solid State Communications(in press)

 

3.    Temperature Dependent Band Gap in GaN: Role of Electron-phonon Interaction

Niladri sarkar and Subhasis Ghosh

Solid State Communications, 149, 1288, 2009.

 

4.    Thickness Dependence of Space Charge Limited  Current  and Injection Limited Current in Organic Molecular Semiconductors

Ruchi Agrawal, Pramod Kumar,  Ajit Kumar Mahapatro and  Subhasis Ghosh

Applied Physics Letters, 93,  073311, 2008.

 

5.    Dissociation of H-related Defect Comlexes in InP Using High Energy Light Ions

D. Kabiraj, A. Roy, J.C. Pivin, Subhasis  Ghosh

Journal of Applied Physics, 104, 033711, 2008.

 

6.    Mechanism of Resistive Switching in  3,4,9,10 Perylenetetracarboxylic Dianhydride(PTCDA) Sandwiched Between Metal Electrodes

Ruchi Agrawal, Pramod Kumar and Subhasis Ghosh

IEEE Trans. On Electron Devices, 55, 2795, 2008.

 

7.           Effect of disorder and strain in the compounds Ln1.2Ba1.2Ca0.6Cu3O7-d (Ln = La, Pr, Nd and Sm) ) and La1.2-xNdxBa1.2Ca0.6Cu3O7

Superconductor  Science and Technology21,  085007, 2008.

 

8.    Modification of Charge Compensation in Semi-insulating Semiconductors by High Energy Light Ion Irradiation

D. Kabiraj, R. Grotzschel, and Subhasis Ghosh

Journal of Applied Physics, 103, 053703 (2008).

 

9.    Charge Carrier Transport in Metal Phthalocyanine Based Disordered Thin Films

Ajit Kumar Mahapatro and Subhasis Ghosh

Journal of Applied Physics, 101, 034318, 2007.

 

10.     Electrical Characterization of Fermi Level Pinning in metal/3,4,9,10 PTCDA interfaces

Ruchi Agrawal and Subhasis Ghosh

Applied Physics Letters, 89, 222114, 2006.

 

11. Origin of Stokes shift in InAs and CdSe quantum dots: Exchange splitting of excitonic states

     Anjana Bagga, P.K. Chattopadhyay, and Subhasis Ghosh

Physical Review B, 74, 035341, 2006.

 

12. Grain-Boundary-Controlled  Current Transport in Copper Phthalocyanine. 

Ajit K. Mahapatro, N. Sarkar and Subhasis Ghosh

Applied Physics Letter, 88, 162110, 2006.

 

13.      Nanometer Scale Electrode Separation Using Electromigration at Room Temperature     

Ajit K. Mahapatro,  Subhasis Ghosh and  D.B.Janes

IEEE Trans. on Nanotechnology, 5, 232, 2006.

 

14.      Zinc Oxalate Nanorods: A Convenient Precursor to Uniform Nanoparticles of ZnO

T. Ahmad,  S. Vaidya, N. Sarkar, Subhasis Ghosh and  A. K. Ganguli

Nanotechnology,  17, 1236, 2006.

 

15.      Temperature Dependence of the Band Gap Shrinkage due to Electron-Phonon Interaction inUundoped n-type AlGaAs.

N. Sarkar and   Subhasis Ghosh

Journal of Physics:Condensed Matter, 18, 1687, 2006.

 

16.     “EL2” Revisited: Observation of   Metastable and Stable Energy Levels of   EL2  in Semi- insulating  GaAs

D. Kabiraj and Subhasis Ghosh,

Applied Physics Letter, 87, 252118, 2005.

 

17.     Device Structure for Electronic Transport Through Individual Molecules Using Nanoelectrodes

Subhasis Ghosh, H.  Halimun, A. K. Mahapatro, J. Choi, S. Lodha, and D. Janes,

Applied Physics Letter, 87, 233509, 2005.

 

18.      Photoluminescence Spectroscopy of many-body Effects in Heavily Doped AlGaAs.

       N. Sarkar and  Subhasis Ghosh,

Physical Review B, 71, 233204, 2005.

 

19.      Dark and Bright Excitonic States in Nitride Quantum Dots.

       Anjana, P.K. Chattopadhyay and  Subhasis Ghosh,

Physical Review B, 71, 115327,  2005.

 

20.     DC Electrical Characterization of ds-DNA Using in  Nano-Gap Junctions.

Samir M. Iqbal, G. Balasundaram, Subhasis Ghosh, Donald E. Bergstrom, Rashid Bashir

Applied Physics Letter, 86, 153901, 2005.         

 

21.      Energy Levels in Spheroidal Quantum Dot.

       Anjana, P. K. Chattopadhyay and  Subhasis Ghosh,

Nanotechnology, 16, 2726, 2005.

 

22.      Origin of Low Frequency  Transconductance Dispersion in p-HEMT.

       V. R. Balakrishnan, V. Kumar and  Subhasis Ghosh,

Semiconductor  Science  & Technology, 20, 783, 2005.        

 

23.     Modifications  of   EL2 Related  Stable and Metastable Defects in SI-GaAs By High Energy Light   Ion Irradiation

D. Kabiraj and  Subhasis Ghosh,

Semiconductor Science & Technology, 20, 1022, 2005.