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1999-1992
1.
Low Field Electron Mobility in GaN
S. Dhar and Subhasis Ghosh,
Journal Applied Physics,
86, 2668, 1999.
2.
Evidence for Two Si-Related DX Like Centers in AlGaAs and GaAs
Subhasis Ghosh and V. Kumar,
Solid State Communication,
106, 163, 1998.
3.
Conductance DLTS Study of Anomolous Hole Trap in GaAs MESFETs
V. R. Balakrishnan, V. Kumar and Subhasis Ghosh, Semicon Sci and Tech,
13, 1094, 1998.
4.
Inverted Order of the Acceptor and Donor Levels of DX Center in AlGaAs
Subhasis Ghosh and V. Kumar,
Physical Review B,
55, 4042, 1997.
5.
Study of Surface Conduction Related Effects in GaAs MESFET's
V. R. Balakrishnan, V. Kumar and Subhasis Ghosh,
Solid State Phenomena,
57-58, 431, 1997.
6.
Experimental Evidence of Surface Conduction Contributing to
Tranceconductance Dispersion in GaAs MESFETs
V. Balakrishnan, V. Kumar and Subhasis Ghosh,
IEEE Tran Electr Dev,
ED-44, 1060,1997.
7.
Confirmation of the Metastable State of DX Center in AlGaAs by Transient
Photoconductivity
Subhasis Ghosh and V. Kumar,
Solid State Communication,
104, 781, 1997.
8.
Mobility of 2D Hole Gas in Si-SiGe-Si Quantum Well based on a new
WaveFunction
S. Kundu, S. Roy Chaudhuri and Subhasis Ghosh,
Physica Status Solidi(B),
198, 639, 1996.
9.
Deep Level Transient Spectroscopic Study of DX Center in Heavily Doped GaAs
Subhasis Ghosh and V. Kumar,
Solid State Communication,
98, 195, 1995.
10.
A Spectroscopic Technique for Determining Capture Cross-section Activation
Energy of DX Center by Deep Level Transient Spectroscopy
Subhasis Ghosh and V. Kumar,
Journal of Applied Physics,
75, 8243, 1994.
11.
Stretch Exponential Relaxation of Persistent Photoconductivity due to DX
Centers in AlGaAs
Subhasis Ghosh and V. Kumar,
Europhysics Letters,
24, 779, 1993.
12.
Transient Photoconductivity in Silicon Doped AlGaAs,
Subhasis Ghosh and V. Kumar,
Solid State Communication,
83, 37, 1992.
13.
Direct Evidence for Negative-U Nature of DX Center in AlGaAs
Subhasis Ghosh and V. Kumar,
Physical Review B,
46 , 7533, 1992. |