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Atomically Thin 2D Crystals for Nanoelectronics devices

Atomically Thin 2D Crystals for Nanoelectronics devices

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Atomically Thin 2D Crystals for Nanoelectronics devices
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<strong>Special Centre for Nano Sciences Jawaharlal Nehru University</strong> a Seminar on <strong>Atomically Thin 2D Crystals for Nanoelectronics devices</strong> by <strong>Dr. Dattatray Late </strong> CSIR-National Chemical Laboratory, Pune Date: <strong>14th march 2015</strong> <strong>Abstract:</strong> Atomically thin 2D-dimensional materials have attracted significant attention from the scientific community in the last few years due to their potential exotic transport physics and prospects for technological applications in various fields. As the first prototype of layered structures, graphene and graphene like inorganic layered materials has been ynthesized and widely studied for its unusual electrical, optical, mechanical properties. The main advantage of graphene-based transistors is the associated carrier high mobilities. However, several problems remain with graphene due to absence of a band gap which is essential for transistor applications. The discovery of graphene opened the door to 2D crystal materials. Following graphene, there has been emerging interest in exploring other single-sheet 2-D layered structures such as MoS2, WS2, MoSe2, WSe2 etc. semiconductor with a finite and direct band gap in contrast to graphene which is gapless and thus can potentially find widespread applications in next generation electronics and energy technology [1-5]. Being monolayer in thickness, their performances in transistor devices are highly dependent on their interface with the substrate and atmospheric adsorbates. We attempt to address few issues by fabricating single layer MoS2 transistors on self assembled, ultrathin, hybrid organic-inorganic, and high-k nanodielectrics. We observe low operating voltages and improved performance. Also, uniform coverage of MoS2 transistors with silicon nitride grown by plasma-enhanced chemical vapor deposition completely removes the hysteresis while the device mobility can be improved dramatically [3-4]. Atomically thin MoS2, WS2, MoSe2 shows sensitive detection of gases such as NH3 and NO2 at room temperature and atmospheric pressure [5]. Also, the few layers of MoS2, WS2, SnS2, VS2 and its composite with graphene were suitable for use in next generation field emitter devices due enhanced electron emission performance [6-8]. KEYWORDS: Layered Materials, Nanodielectrics, Transistor, Sensors, Field Emission. *E-mail: dj.late@ncl.res.in, datta099@gamil.com References: [1] D. J. Late, B. Liu, H. Matte, C. N. R. Rao, V. P. Dravid, Adv. Fun. Mat., 22 (2012) 1894. [2] D. J. Late, B. Liu, J. Liu, A. Yan, H. Matte, M. Grayson, C. N. R. Rao, V. P. Dravid, Adv. Mat., 24 (2012) 3549. [3] D. J. Late, B. Liu, H. Matte, V. P. Dravid, C. N. R. Rao, ACS Nano, 6 (2012) 5635. [4] D. Jariwala, V. K. Sangwan, D. J. Late, et. al. Appl. Phys. Lett. 102 (2013)173107. [5] D. J. Late, Y. Huang, et. al. ACS Nano 7 (2013) 4879–4891. [6] C. Rout, P. Joshi, R. Kashid, D. Joag, M. More, A. Simbeck, M. Washington, S. K. Nayak, D. J. Late, Sci. Rep. (Nature) 3, (2013) 3282. [7] R.V. Kashid, D. J. Late, M. A. More, D. S. Joag, V. P. Dravid, Small, 9 (2013), 2730. [8] D. J. Late, P. A. Shaikh, R. Khare, R. V. Kashid, M. Chaudhary, M. A. More, S. B. Ogale, ACS Appl. Mater. Interfaces 2014. DOI: 10.1021/am503464h. [9] C. S. Rout, R. Tiwari, R. V. Kashid, D. S. Joag, M. A. More, A. J. Simbeck, M. Washington, S. K. Nayak, D. J. Late, Europ J. Inorganic Chem. 2014. DOI: 10.1002/ejic.201402448. [10] C. S. Rout, P. D. Joshi, R. V. Kashid, D. S. Joag, M. A. More, A. Simbeck, M. Washington, S. K. Nayak, D. J. Late, Appl. Phy Lett. 105 (2014) 043109.

A warm welcome to the modified and updated website of the Centre for East Asian Studies. The East Asian region has been at the forefront of several path-breaking changes since 1970s beginning with the redefining the development architecture with its State-led development model besides emerging as a major region in the global politics and a key hub of the sophisticated technologies. The Centre is one of the thirteen Centres of the School of International Studies, Jawaharlal Nehru University, New Delhi that provides a holistic understanding of the region.

Initially, established as a Centre for Chinese and Japanese Studies, it subsequently grew to include Korean Studies as well. At present there are eight faculty members in the Centre. Several distinguished faculty who have now retired include the late Prof. Gargi Dutt, Prof. P.A.N. Murthy, Prof. G.P. Deshpande, Dr. Nranarayan Das, Prof. R.R. Krishnan and Prof. K.V. Kesavan. Besides, Dr. Madhu Bhalla served at the Centre in Chinese Studies Programme during 1994-2006. In addition, Ms. Kamlesh Jain and Dr. M. M. Kunju served the Centre as the Documentation Officers in Chinese and Japanese Studies respectively.

The academic curriculum covers both modern and contemporary facets of East Asia as each scholar specializes in an area of his/her interest in the region. The integrated course involves two semesters of classes at the M. Phil programme and a dissertation for the M. Phil and a thesis for Ph. D programme respectively. The central objective is to impart an interdisciplinary knowledge and understanding of history, foreign policy, government and politics, society and culture and political economy of the respective areas. Students can explore new and emerging themes such as East Asian regionalism, the evolving East Asian Community, the rise of China, resurgence of Japan and the prospects for reunification of the Korean peninsula. Additionally, the Centre lays great emphasis on the building of language skills. The background of scholars includes mostly from the social science disciplines; History, Political Science, Economics, Sociology, International Relations and language.

Several students of the centre have been recipients of prestigious research fellowships awarded by Japan Foundation, Mombusho (Ministry of Education, Government of Japan), Saburo Okita Memorial Fellowship, Nippon Foundation, Korea Foundation, Nehru Memorial Fellowship, and Fellowship from the Chinese and Taiwanese Governments. Besides, students from Japan receive fellowship from the Indian Council of Cultural Relations.